Optimized Thermal Field of SiC Crystal Growth by Modifying Crucible Structure

SiC substrates have unparalleled advantages over traditional materials in power device applications and are mainly prepared by physical vapor transport (PVT). In this paper, STR-VR software is used to simulate the internal thermal field and the shape of crystal evolution in cases which are without the heating crucible and the height of the heating crucible above the graphite crucible. After adding the heating crucible, the temperature gradient in the graphite crucible decreased. When the height is between 0 and 20 mm, the slightly convex isotherm is obtained at the growth interface, which is conducive to the growth of a single stable polytype form. This also verifies that the desired crystal growth state could be obtained by adjusting the height of the heating crucible above the graphite crucible.