材料科学
光电探测器
聚合物
光电子学
图层(电子)
宽带
阻塞(统计)
电荷(物理)
纳米技术
光学
复合材料
数学
量子力学
统计
物理
作者
Hyocheol Jung,Tai D. Nguyen,Soyeon Kim,Jae Woong Lee,Hyeonggeun Yu,Junsung Park,Chanwoo Lim,Jihoon Lee,Do Young Kim
标识
DOI:10.1002/adfm.202403094
摘要
Abstract Ultraviolet (UV), visible, and near‐infrared (NIR) broadband organic photodetectors are fabricated by sequential solution‐based thin film coatings of a polymer electron blocking layer (EBL) and a polymer photoactive layer. To avoid damage to a preceding polymer EBL during a subsequent solution‐based film coating of a polymer photoactive layer due to lack of solvent orthogonality, 2‐(((4‐azido‐2,3,5,6‐tetrafluorobenzoyl)oxy)methyl)−2‐ethylpropane‐1,3‐diyl bis(4‐azido‐2,3,5,6‐tetrafluorobenzoate) (FPA‐3F) is used as a novel organic cross‐linking agent activated by UV irradiation with a wavelength of 254 nm. Solution‐processed poly[N,N′‐bis(4‐butylphenyl)‐N,N′‐bis(phenyl)‐benzidine] (poly‐TPD) films, which are cross‐linked with a FPA‐3F photocrosslinker, are used for a preceding polymer EBL. A ternary blend film composed of PTB7‐Th, COi8DFIC, and PC 71 BM is used as a NIR‐sensitive organic photoactive layer with strong photosensitivity in multispectral (UV–visible–NIR) wavelengths of 300–1,050 nm. Poly‐TPD films are successfully cross‐linked even with a very small amount of 1 wt% FPA‐3F. Small amounts of FPA‐3F have little detrimental effect on the electrical and optoelectronic properties of the cross‐linked poly‐TPD EBL. Finally, organic NIR photodetectors with a poly‐TPD EBL cross‐linked by the small addition of FPA‐3F (1 wt%) show the detectivity values higher than 1 × 10 12 Jones for the entire UV–visible–NIR wavelengths from 300 nm to 1050 nm, and the maximum detectivity values of 1.41 × 10 13 Jones and 8.90 × 10 12 Jones at the NIR wavelengths of 900 and 1000 nm, respectively.
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