铁电性
材料科学
薄膜
极化(电化学)
微电子
相变
钙钛矿(结构)
化学物理
光电子学
凝聚态物理
纳米技术
多铁性
电介质
制作
相(物质)
卤化物
离子键合
作者
Huan‐Huan Chen,Yan Qin,Yao Zhang,Hui‐Peng Lv,Xian‐Jiang Song,Wei‐Qiang Liao,Ren‐Gen Xiong,Xiao‐Gang Chen
标识
DOI:10.1002/adma.202520443
摘要
Abstract The realization of pure out‐of‐plane polarization in ferroelectric thin films is crucial for next‐generation high‐performance microelectronics and miniaturized devices. Molecular ferroelectrics, which allow facile and large‐area thin‐film fabrication via solution processing, have gained tremendous attention in recent years. However, to date, molecular ferroelectric thin films with pure out‐of‐plane polarization have never been reported due to the inconsistency of their random orientation with the polarization direction. Herein, 3D chiral alkali metal halide ferroelectrics R / S ‐AQCsI 3 (AQ = 3‐aminoquinolinium) are designed, of which thin films exhibit a highly preferred (00 l ) orientation. Notably, R / S ‐AQCsI 3 can undergo an unprecedented reconstructive phase transition from hybrid 3D perovskitoid to perovskite structure while maintaining the thin films with the (00 l ) preferential orientation. More importantly, such a topological rearrangement of the 3D inorganic [CsI 3 ] n 2− framework triggers chiral AQ 2+ cation reorientation in the lattice, which changes the polarization direction from b ‐axis in the polar perovskitoid phase to c ‐axis in the perovskite phase, enabling the variation from pure in‐plane to pure out‐of‐plane polarization in the thin‐film. To the knowledge, this is the first report of molecular ferroelectric thin films with pure out‐of‐plane polarization. This work opens up an avenue for achieving pure out‐of‐plane polarization in molecular ferroelectric thin films.
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