开路电压
带隙
材料科学
光电子学
图层(电子)
电压
基础(拓扑)
领域(数学)
分析化学(期刊)
电气工程
纳米技术
化学
工程类
数学
数学分析
色谱法
纯数学
作者
R. J. Schwartz,J.L. Gray
标识
DOI:10.1109/pvsc.1990.111734
摘要
The initial results of the modeling of CuIn/sub 1-x/Ga/sub x/Se/sub 2/ cells presently reported can provide considerable insight into the design of these cells. The use of 1 .64-eV bandgap CuIn/sub 1-x/Ga/sub x/Se/sub 2/, layers in the space-charge region to improve open-circuit voltage and at the rear of the base to act as a back-surface field region is discussed. It is shown that the open-circuit voltage can be improved with the use of these layers and that the short-circuit current and fill factor can be significantly influenced by the use of a widegap layer.< >
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