Analytical Modeling of Threshold Voltage for a Biaxial Strained-Si-MOSFET

In this paper, an attempt has been made to model threshold voltage of biaxial strained silicon MOSFET in one dimension. The results show that a significant amount of threshold voltage decrease has been observed with the increase in the germanium content in the silicon. The results have also been compared with the reported results. The results compare well with the existing reported work.