钙钛矿(结构)
材料科学
卤化物
异质结
记忆电阻器
光电子学
非易失性存储器
重置(财务)
电阻随机存取存储器
电压
无机化学
电子工程
电气工程
结晶学
化学
经济
工程类
金融经济学
作者
Liu Hongzhang,Yifan Wu,Yonghong Hu
标识
DOI:10.1016/j.ceramint.2017.02.128
摘要
All-inorganic halide perovskite CsPbBr3 have been developed and investigated. We have further demonstrated the using of this stable all-inorganic halide perovskite as storage media in memristors. Reproducible typical bipolar resistance switching behaviors in two different structures of resistance random access memory devices (Pt/CsPbBr3/FTO and Pt/CsPbBr3/Cu2O/FTO) are observed. Particularly, the Pt/CsPbBr3/Cu2O/FTO device based on CsPbBr3/Cu2O heterojunction exhibits a remarkably high resistance switching effect with low set and reset voltages. Such appealing characteristics are comparable with those of frequently-used transition metal oxides perovskites like BaTiO3 and SrZrO3, etc. Possible conduction mechanisms are also proposed to understand the resistance switching behaviors of the studied devices.
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