光电子学
电容
整改
材料科学
电压
异质结
电流(流体)
空间电荷
偏压
大气温度范围
电气工程
分析化学(期刊)
化学
物理
电极
电子
量子力学
工程类
物理化学
色谱法
气象学
作者
M.M. El-Nahass,Adel S. Faidah
标识
DOI:10.1051/epjap/2009034
摘要
Current voltage and capacitance-voltage characteristics for SnPc thin film with ~105 nm thickness; deposited on p-GaAs single crystals have been investigated. The dark current voltage-characteristics of the prepared junction have been investigated in a temperature range from ~303 to 393 K. The obtained results showed rectification behaviour. At low forward and reverse bias, the current was found to be limited by the thermoionic emission, while at high forward voltage, space charge limited current dominated by a single trap level of 0.22 eV. The analysis of the dark capacitance voltage characteristics indicated that the carrier concentration is 1.4×1014 cm-3 with a built in voltage ~0.55 eV.
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