类型(生物学)
离域电子
化学计量学
材料科学
离子
导电体
氧化物
结晶学
物理
物理化学
化学
量子力学
复合材料
生态学
生物
冶金
作者
Hannes Raebiger,Stephan Lany,Alex Zunger
标识
DOI:10.1103/physrevb.76.045209
摘要
While most of crystalline wide gap oxides are both stoichiometric and insulating, a handful of them including ZnO and ${\mathrm{In}}_{2}{\mathrm{O}}_{3}$ are naturally anion-deficient and electron conductors. Even fewer of the oxides are naturally cation-deficient and hole conductors, the arch-type of which is ${\mathrm{Cu}}_{2}\mathrm{O}$. Based on first principles calculation of equilibrium nonstoichiometry and defect stability, we explain why the ${\mathrm{Cu}}^{(I)}({d}^{10})$ oxide-based materials are both $p$-type and naturally cation-deficient, and why cation vacancies lead to delocalized, conductive states, whereas in other oxides (e.g., ZnO and MgO), they lead to localized, nonconductive states.
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