平面的
p-n结
击穿电压
杂质
戒指(化学)
限制
曲率
硅
物理
电气工程
电压
材料科学
拓扑(电路)
光电子学
分析化学(期刊)
化学
数学
几何学
计算机科学
量子力学
半导体
计算机图形学(图像)
工程类
有机化学
机械工程
色谱法
作者
Yu Chen Kao,E.D. Wolley
出处
期刊:Proceedings of the IEEE
[Institute of Electrical and Electronics Engineers]
日期:1967-01-01
卷期号:55 (8): 1409-1414
被引量:115
标识
DOI:10.1109/proc.1967.5842
摘要
A concentric ring junction has been devised to prevent surface breakdown of a planar junction. By properly choosing the spacing between the main junction and the ring, the ring junction acts like a voltage divider at the surface. In addition, the ring junction minimizes the effect of the junction curvature at the periphery of a planar junction. Devices fabricated with three such rings showed breakdown voltages of 2000 and 3200 volts on n-type silicon with impurity concentrations 6.5 × 10 13 and 2.5 × 10 13 cm -3 , respectively. That the structure operated as proposed was corroborated by comparison of the reverse leakage current with a one parameter fit to a theoretically calculated current obtained from the approximated volume of the space charge regions. These results together with the photo response measurements indicate that the field-limiting ring junction can be used successfully to obtain high-voltage planar p-n junctions.
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