材料科学
肖特基势垒
光电子学
肖特基二极管
晶体管
磁滞
金属半导体结
双层
场效应晶体管
光电导性
电压
凝聚态物理
电气工程
二极管
膜
遗传学
生物
物理
工程类
作者
Antonio Di Bartolomeo,Alessandro Grillo,Francesca Urban,Laura Iemmo,Giuseppe Luongo,Giampiero Amato,Luca Croin,Linfeng Sun,Shi‐Jun Liang,L. K. Ang
标识
DOI:10.1002/adfm.201800657
摘要
Abstract The high‐bias electrical characteristics of back‐gated field‐effect transistors with chemical vapor deposition synthesized bilayer MoS 2 channel and Ti Schottky contacts are discussed. It is found that oxidized Ti contacts on MoS 2 form rectifying junctions with ≈0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, a model is proposed based on two slightly asymmetric back‐to‐back Schottky barriers, where the highest current arises from image force barrier lowering at the electrically forced junction, while the reverse current is due to Schottky‐barrier‐limited injection at the grounded junction. The device achieves a photoresponsivity greater than 2.5 A W −1 under 5 mW cm −2 white‐LED light. By comparing two‐ and four‐probe measurements, it is demonstrated that the hysteresis and persistent photoconductivity exhibited by the transistor are peculiarities of the MoS 2 channel rather than effects of the Ti/MoS 2 interface.
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