This paper used a piezoresistive effect-meso-piezoresistive effect-in a double-barrier resonant tunneling(DBRT) structure,took GaAs/AlAs/InGaAs DBRT film as core component,a pressure sensor with a film fixed around is designed.Grade of sensitivity are compared meso-piezoresistive with general,principle of meso-piezoresistive effects is verified,it can be inproved sensitivity of sensor to produced new micro-transducers based on meso-piezoresistive effect offers a new means.