退火(玻璃)
材料科学
兴奋剂
等温过程
电子
费米能级
饱和(图论)
分析化学(期刊)
化学
冶金
热力学
光电子学
物理
环境化学
数学
组合数学
量子力学
作者
Yajie Li,Guibin Chen,K. M. Yu,W. Walukiewicz,Weiping Gong
出处
期刊:Crystals
[MDPI AG]
日期:2021-09-06
卷期号:11 (9): 1079-1079
标识
DOI:10.3390/cryst11091079
摘要
As-grown Ar-deposited Cd1−xVxO and Ar/O2-deposited Cd1−yVyO feature lower and higher electron concentrations than 4 × 1020 cm−3, respectively. After isothermal and isochronal annealing under N2 ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 1020 cm−3 which is close to Fermi stabilization energy (EFS) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO.
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