赝势
二硫化钼
带隙
拉曼光谱
材料科学
拉伤
密度泛函理论
直接和间接带隙
电子能带结构
凝聚态物理
钼
图层(电子)
态密度
结晶学
分子物理学
计算化学
化学
纳米技术
复合材料
光学
光电子学
物理
冶金
内科学
医学
作者
Chong Chen,Hongxia Liu,Shulong Wang,Kun Yang
出处
期刊:Nanomaterials
[MDPI AG]
日期:2021-11-19
卷期号:11 (11): 3127-3127
被引量:16
摘要
By adopting the first-principles plane wave pseudopotential method based on density functional theory, the electronic structure properties of single-layer MoS2 (molybdenum disulfide) crystals under biaxial strain are studied. The calculation results in this paper show that when a small strain is applied to a single-layer MoS2, its band structure changes from a direct band gap to an indirect band gap. As the strain increases, the energy band still maintains the characteristics of the indirect band gap, and the band gap shows a linear downward trend. Through further analysis of the density of states, sub-orbital density of states, thermodynamic parameters and Raman spectroscopy, it revealed the variation of single-layer MoS2 with strain. This provides a theoretical basis for realizing the strain regulation of MoS2.
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