异质结
材料科学
化学气相沉积
外延
光电子学
纳米线
纳米片
纳米技术
扫描电子显微镜
GSM演进的增强数据速率
图层(电子)
复合材料
计算机科学
电信
作者
Di Wang,Zucheng Zhang,Bo Li,Xidong Duan
标识
DOI:10.1088/1674-4926/42/9/092001
摘要
Abstract Two-dimensional/one-dimensional (2D/1D) heterostructures as a new type of heterostructure have been studied for their unusual properties and promising applications in electronic and optoelectronic devices. However, the studies of 2D/1D heterostructures are mainly focused on vertical heterostructures, such as MoS 2 nanosheet-carbon nanotubes. The research on lateral 2D/1D heterostructures with a tunable width of 1D material is still scarce. In this study, bidirectional flow chemical vapor deposition (CVD) was used to accurately control the width of the WS 2 /WSe 2 (WS 2 /MoS 2 ) heterostructures by controlling reacting time. WSe 2 and MoS 2 with different widths were epitaxially grown at the edge of WS 2 , respectively. Optical microscope, atomic force microscope (AFM), and scanning electron microscope (SEM) images show the morphology and width of the heterostructures. These results show that the width of the heterostructures can be as low as 10 nm by using this method. The interface of the heterostructure is clear and smooth, which is suitable for application. This report offers a new method for the growth of 1D nanowires, and lays the foundation for the future study of the physical and chemical properties of 2D/1D lateral heterostructures.
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