CMOS芯片
图像传感器
像素
电容
灵敏度(控制系统)
噪音(视频)
光电二极管
噪声系数
暗电流
图像分辨率
电子工程
计算机科学
电气工程
光电子学
材料科学
光学
工程类
物理
人工智能
光电探测器
图像(数学)
量子力学
放大器
电极
作者
Donghyuk Park,Woong Joo,Yunki Lee,Seungjoo Nah,Heegeun Jeong,Bum Suk Kim,Sungmoon Jung,Jesuk Lee,Yitae Kim,Cheol Moon,Yongin Park,Seung-Wook Lee,Jinhwa Han,Dongyoung Jang,Hayoung Kwon,Seungwon Cha,Mi-Hye Kim,Haewon Lee,Sungho Suh
出处
期刊:International Electron Devices Meeting
日期:2019-12-01
被引量:11
标识
DOI:10.1109/iedm19573.2019.8993487
摘要
A 0.8 μm-pitch 64 megapixels ultrahigh-resolution CMOS image sensor has been demonstrated for mobile applications for the first time. Full-well capacity (FWC) of 6k e- was achieved in 0.8 μm pixels as the best in the world, and the advanced color filter (CF) isolation technology was introduced to overcome sensitivity degradation. Dual conversion gain (CG) technology was also first applied to mobile applications to improve the FWC performance of Tetracell up to 12k e-. In addition, highly refined deep trench isolation (DTI) and photodiode design significantly improved dark noise characteristics.
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