电致发光
光电子学
材料科学
红外线的
发光二极管
二极管
二硫化钼
基质(水族馆)
异质结
光子学
量子效率
半导体
电场
波长
光学
图层(电子)
纳米技术
物理
海洋学
量子力学
地质学
冶金
作者
Junjia Wang,Adrien Rousseau,Mei Yang,Tony Low,S. Francoeur,Stéphane Kéna‐Cohen
出处
期刊:Nano Letters
[American Chemical Society]
日期:2020-04-14
卷期号:20 (5): 3651-3655
被引量:99
标识
DOI:10.1021/acs.nanolett.0c00581
摘要
We demonstrate a mid-infrared light-emitting diode based on the 2D semiconductor black phosphorus (BP). The device is composed of a mechanically exfoliated BP/molybdenum disulfide heterojunction. Under forward bias, it emits polarized electroluminescence at λ = 3.68 μm, with room-temperature internal and external quantum efficiencies of ∼1% and ∼0.03%, respectively. In our structure, outcoupling losses are dominated by radiation toward the high refractive index substrate. The ability to tune the bandgap of BP and consequently its emission wavelength with layer number, strain, and electric field make these LEDs particularly attractive for heterointegration into mid-infrared photonic platforms.
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