钙钛矿(结构)
带隙
重整化
卤化物
材料科学
光电子学
瞬态(计算机编程)
玻尔兹曼常数
超快激光光谱学
凝聚态物理
计算物理学
物理
化学
光学
计算机科学
热力学
量子力学
激光器
操作系统
无机化学
结晶学
作者
Jia Wei Melvin Lim,David Giovanni,Marcello Righetto,Minjun Feng,Subodh Mhaisalkar,Nripan Mathews,Tze Chien Sum
标识
DOI:10.1021/acs.jpclett.0c00504
摘要
Slow hot carrier cooling in halide perovskites holds the key to the development of hot carrier (HC) perovskite solar cells. For accurate modeling and pragmatic design of HC materials and devices, it is essential that HC temperatures are reliably determined. A common approach involves fitting the high-energy tail of the main photobleaching peak in a transient absorption spectrum with a Maxwell-Boltzmann distribution. However, this approach is problematic because of complications from the overlap of several photophysical phenomena and a lack of consensus in the community on the fitting procedures. Herein, we propose a simple approach that circumvents these challenges. Through tracking the broadband spectral evolution and accounting for bandgap renormalization and spectral line width broadening effects, our method extracts not only accurate and consistent carrier temperatures but also other important parameters such as the quasi-Fermi levels, bandgap renormalization constant, etc. Establishing a reliable method for the carrier temperature determination is a step forward in the study of HCs for next-generation perovskite optoelectronics.
科研通智能强力驱动
Strongly Powered by AbleSci AI