薄脆饼
湿法清洗
表面粗糙度
材料科学
分析化学(期刊)
硅
表面光洁度
化学
光电子学
复合材料
色谱法
有机化学
作者
Tomoyuki Suwa,Akinobu Teramoto,Yoshihito Shirai,Takenobu Matsuo,Nobutaka Mizutani,Shigetoshi Sugawa
出处
期刊:ECS transactions
[The Electrochemical Society]
日期:2020-04-24
卷期号:97 (3): 23-29
标识
DOI:10.1149/09703.0023ecst
摘要
We investigated the influence of O 2 concentration in ultra pure water (UPW) on the Si(110) surface roughness during the immersion of Si into UPW. The suppressing of O 2 concentration in UPW is very effective to suppress the increase of microroughness of Si(110) surface. The O 2 concentration in UPW can be controlled by the ambient O 2 concentration. Si(110) surface cannot be roughened when the O 2 concentration is suppressed to less than 100 ppm in ambient (4 ppb in UPW) and the immersion time is less than 1 hour. It can be expected that the Si(110) surface flatness is maintained, and this surface is mainly used for the channel of FinFET. Furthermore, we demonstrated that the O 2 concentration in a prototype 200-mm single-wafer cleaning chamber can be decreased to less than 100 ppm within 1 minute by an N 2 purge of 200 l/min.
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