材料科学
异质结
光电子学
光电二极管
微波食品加热
功率(物理)
分子束外延
作者
K. S. Zhuravlev,A. M. Gilinskii,I. B. Chistokhin,N. A. Valisheva,Dmitriy V. Dmitriev,A. I. Toropov,M. S. Aksenov,A. Chizh,K. Mikitchuk
出处
期刊:Technical Physics
[Springer Nature]
日期:2022-02-09
标识
DOI:10.1134/s1063784221070185
摘要
The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined at a level of 1.5 rad/W. This value exceeds available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise.
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