Synthesis of High‐Performance Monolayer Molybdenum Disulfide at Low Temperature

Abstract The large‐area synthesis of high‐quality MoS 2 plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)‐grown MoS 2 require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high‐quality monolayer MoS 2 with the domain size up to 120 µm by metal‐organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low‐substrate temperature, the MOCVD‐grown MoS 2 exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm 2 V −1 s −1 at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS 2 growth process via a geometric model of the MoS 2 flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.