Single-nanowire silicon photodetectors with core-shell radial Schottky junction for self-powering application
肖特基二极管
整改
异质结
光电流
制作
二极管
作者
Yuxiang Guan,Guoyang Cao,Xiaofeng Li
出处
期刊:Applied Physics Letters [American Institute of Physics] 日期:2021-04-14卷期号:118 (15): 153904-被引量:1
标识
DOI:10.1063/5.0046096
摘要
A silicon (Si) based core-shell single-nanowire photodetector with the radially configured Schottky junction is presented for high-performance self-powering photodetection application. The optoelectronic properties of the device are evaluated by performing a comprehensive device-level simulation using the finite-element method. An extremely high responsivity of 107 A/W at zero bias is predicted, which is three orders higher than that of the axially configured device. Additionally, the time-dependent simulation reveals that the system with the radial semiconductor junction shows a fast response with an unbiased response time of 22 μs. We explore detailedly the underlying mechanisms for the high-performance responses of this nanostructured photodetector. It is found that the single-nanowire design with the radial junction enables a high light absorption in optical domain as well as a very efficient and fast carrier transport in electrical domain.