Tuning the electronic properties of two dimensional InSe/In2Se3 heterostructure via ferroelectric polarization and strain

Two dimensional (2D) ferroelectric heterostructures with tunable electronic properties show many novel physical properties, which have gradually aroused great interest. Herein, based on first-principle calculations, we present a comprehensive research on the electronic properties of InSe/In2Se3 ferroelectric van der Waals heterostructures with and without strains. We have obtained the most stable stack configuration of the heterostructure. Under a certain strain, the pure electric field can control the change of semiconductor types and the transition between direct and indirect band gap. In addition, we found that the built-in electric field served by ferroelectric polarization makes the InSe/In2Se3 heterostructure have higher light absorption than monolayer InSe and In2Se3. Our results show that InSe/In2Se3 heterostructure may have great potential applications in electronic and optoelectronic devices or other fields.