磷
无定形固体
拉曼光谱
材料科学
纳米线
黑磷
薄脆饼
安瓿
基质(水族馆)
化学工程
纳米技术
结晶学
化学
光学
光电子学
冶金
复合材料
物理
地质学
工程类
海洋学
作者
Joshua B. Smith,Daniel Hagaman,David DiGuiseppi,Reinhard Schweitzer‐Stenner,Hai‐Feng Ji
标识
DOI:10.1002/anie.201605516
摘要
Abstract Heating red phosphorus in sealed ampoules in the presence of a Sn/SnI 4 catalyst mixture has provided bulk black phosphorus at much lower pressures than those required for allotropic conversion by anvil cells. Herein we report the growth of ultra‐long 1D red phosphorus nanowires (>1 mm) selectively onto a wafer substrate from red phosphorus powder and a thin film of red phosphorus in the present of a Sn/SnI 4 catalyst. Raman spectra and X‐ray diffraction characterization suggested the formation of crystalline red phosphorus nanowires. FET devices constructed with the red phosphorus nanowires displayed a typical I –V curve similar to that of black phosphorus and a similar mobility reaching 300 cm 2 V −1 s with an I on / I off ratio approaching 10 2 . A significant response to infrared light was observed from the FET device.
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