New High Performance Transistors by the Blanket Large-Angle-Tilt Implant for N-Channel LDDS and P-Channel Halos

The large angle tilt implant technique has been used in two different manners to optimize MOS transistor performance. Large-Angle-Tilt-Implanted drain (LATIDs) were invented to improve n-channel transistor hot carrier immunity and the large angle implanted halos were used to suppress the subthreshold leakage. In this paper, we propose a new transistor architecture which applies a blanket LATID implant for NLDD and for p-channel halo, simultaneously. We have achieved the excellent n-channel hot carrier immunity at L eff =0.4um, the high p-channel current drive as -300uA/um and the acceptable p-channel short channel hardness. The process saves one masking step and one implant step.