量子点
多光谱图像
光电子学
图像传感器
光电二极管
百叶窗
材料科学
薄脆饼
计算机科学
像素
量子点激光器
光学
半导体
物理
计算机视觉
半导体激光器理论
作者
E. Mandelli,Zach M. Beiley,Naveen Kolli,Andras G. Pattantyus-Abraham
摘要
This work presents the development of a quantum dot-based photosensitive film engineered to be integrated on standard CMOS process wafers. It enables the design of exceptionally high performance, reliable image sensors. Quantum dot solids absorb light much more rapidly than typical silicon-based photodiodes do, and with the ability to tune the effective material bandgap, quantum dot-based imagers enable higher quantum efficiency over extended spectral bands, both in the Visible and IR regions of the spectrum. Moreover, a quantum dot-based image sensor enables desirable functions such as ultra-small pixels with low crosstalk, high full well capacity, global shutter and wide dynamic range at a relatively low manufacturing cost. At InVisage, we have optimized the manufacturing process flow and are now able to produce high-end image sensors for both visible and NIR in quantity.
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