Measurement of radiative and auger recombination rates in p -type InGaAsP diode lasers

Carrier lifetimes and spontaneous emission rates are reported for InGaAsP diode lasers. For active layers Zn-doped in the range 1−2 × 1018/cm3 the radiative recombination constant B is 0.8 × 10−10 cm3/s and the nonradiative constant C is 0.9 × 10−28 cm6/s for a Cnp2 Auger process. For lightly doped lasers the Auger model alone cannot explain the data.