TSV Stress Testing and Modeling for 3D IC Applications

The stress investigation on through-silicon vias (TSVs) is important for 3D IC development. This work summarizes the stress measurement and modeling results for TSVs based on the use of micro-Raman Spectroscopy, which can be used to determine the material, process and design of TSVs. More importantly, this study can provide an important guideline for the reliability analysis of the TSV-based 3D IC.