石墨烯
材料科学
聚偏氟乙烯
光电子学
量子隧道
电阻随机存取存储器
热传导
旋涂
异质结
纳米技术
涂层
空间电荷
俘获
电压
聚合物
电子
复合材料
电气工程
工程类
生态学
物理
量子力学
生物
作者
Geetika Khurana,Pankaj Misra,Ram S. Katiyar
出处
期刊:Carbon
[Elsevier]
日期:2014-09-01
卷期号:76: 341-347
被引量:80
标识
DOI:10.1016/j.carbon.2014.04.085
摘要
A novel multilevel resistive switching was observed in trilayer stacked geometry composed of graphene nano flakes sandwiched between polyvinylidene fluoride layers fabricated by spin coating method, which are expected to fulfill the need of high density data storage memories. External parameters such as current compliance and induced voltage pulse imposed on the devices provided an aid to tune the inherent resistance states. As fabricated devices exhibited multi level switching with stable resistance ratios between different resistance states having excellent data retention and endurance. Space charge limited conduction and Fowler–Nordheim (F–N) tunneling were found to be responsible for the switching mechanism. Graphene enriched with trapping sites provides the adequate environment for F–N tunneling process to occur, resulting in multi-bit resistance states.
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