Liquinert quartz crucible for the growth of multicrystalline Si ingots

Abstract The growth of a multicrystalline silicon (mc‐Si) ingot for solar cell applications was attempted using a Liquinert quartz crucible. A mc‐Si ingot was also grown in a quartz crucible coated with Si 3 N 4 powder for comparison with that from the Liquinert quartz crucible. The mc‐Si ingot grown in the Liquinert quartz crucible had a shinier surface which has few impurity particles and higher minority carrier lifetime than the mc‐Si ingot grown in a quartz crucible coated with Si 3 N 4 powder. These results indicate that contamination with impurities was reduced with the Liquinert quartz crucible; therefore, this crucible has the potential to be a powerful tool for the production of high‐quality mc‐Si ingots for solar cell applications.