光电探测器
光电流
锗
光电子学
材料科学
光学
光子学
光功率
制作
硅
带宽(计算)
偏压
电压
物理
计算机科学
激光器
电信
医学
病理
量子力学
替代医学
作者
Yan Zuo,Yu Yu,Yu Zhang,De Zhou,Xinliang Zhang
出处
期刊:Optics Letters
[The Optical Society]
日期:2019-06-26
卷期号:44 (13): 3338-3338
被引量:16
摘要
We experimentally demonstrate integrated high-power germanium photodetectors (Ge PDs) by means of light field manipulation. Compared to the conventional Ge PD, the proposed structures have more uniform light distributions in the absorption region. A maximum photocurrent of 27.1 mA at -3 V bias voltage is experimentally obtained, demonstrating 50% more photocurrent generation under high-power illumination. Bandwidth and modulated signal measurements also verify the improved power handling capability. The proposed high-power Ge PD with compact size and large fabrication tolerance will bring new applications for silicon photonics.
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