Suppressing Ambipolar Characteristics of WSe2 Field Effect Transistors Using Graphene Oxide

Abstract Monolayer (1L) tungsten diselenide (WSe 2 ) is of interest for next generation ultrathin flexible electronic devices. However, typical WSe 2 field effect transistors (FETs) show ambipolar characteristics that are not desirable for complementary field‐effect‐transistors and circuits. Here, significant suppression of the ambipolar characteristics of a 1L‐WSe 2 FET is demonstrated by using an electron withdrawing functional group of graphene oxide (GO). The pristine 1L‐WSe 2 FET shows n‐type dominant ambipolar characteristics, whereas the GO coated 1L‐WSe 2 FET shows unipolar p‐type behavior with a huge decrease (1/10 6 ) of current level of the n‐channel. Also, the current level of the p‐channel increases up to ten times that of the pristine 1L‐WSe 2 FET. These results are applicable for the realization of flexible nanoscale digital logic devices by using transition metal dichalcogenides.