横杆开关
记忆电阻器
计算机科学
方案(数学)
计算
前馈
计算机工程
油藏计算
模拟计算机
电子工程
神经形态工程学
基质(化学分析)
计算机体系结构
并行计算
计算机数据存储
推论
并行处理
非线性系统
阅读(过程)
计算科学
计算机硬件
特征(语言学)
栏(排版)
记忆晶体管
作者
Zhuosheng Lin,Xiaona Wu,Zaofeng Chen,Jilong Zhang,Jingliang Deng,Yue Feng
出处
期刊:iScience
[Cell Press]
日期:2026-01-07
卷期号:29 (2): 114642-114642
被引量:3
标识
DOI:10.1016/j.isci.2026.114642
摘要
Reservoir computing has garnered significant attention for its efficiency in processing temporal signals, while the proposed next-generation reservoir computing (NG-RC) further enhances computational efficiency. The analog in-memory computing architecture fundamentally reduces the data transfer operations between data processing units and storage units. This study proposes a novel NG-RC implementation scheme based on memristor crossbar arrays. Specifically, the nonlinear feature vector operation is mathematically converted into matrix multiplication, enabling in situ computation within memristor crossbar arrays. The unique monomial of the vector outer production can be extracted by reading the current of the specific column line in array, facilitating efficient NG-RC implementation. Under ideal memristor device conditions, the proposed scheme demonstrates excellent performance in the prediction and inference tasks, validating its feasibility. Additionally, simulation experiments considering non-ideal memristor characteristics reveal that the programming error is the critical factor affecting the system performance. However, by selecting the appropriate memristor device, the proposed NG-RC implementation scheme shows comparable performance to digital implementations, confirming the effectiveness of the proposed scheme.
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