激光阈值
量子点
光电子学
纳米线
量子点激光器
材料科学
等离子体子
激光器
纳米激光器
纳米光子学
光子学
量子线
半导体激光器理论
光学
物理
波长
量子
半导体
量子力学
作者
Jinfa Ho,J. Tatebayashi,Sylvain Sergent,Chee Fai Fong,Yasutomo Ota,Satoshi Iwamoto,Yasuhiko Arakawa
出处
期刊:Nano Letters
[American Chemical Society]
日期:2016-03-31
卷期号:16 (4): 2845-2850
被引量:63
标识
DOI:10.1021/acs.nanolett.6b00706
摘要
Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs–AlGaAs core–shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm2 was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.
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