材料科学
随时间变化的栅氧化层击穿
介电强度
导电原子力显微镜
电介质
电容器
氧化物
光电子学
栅氧化层
原子力显微镜
分析化学(期刊)
纳米技术
电压
电气工程
晶体管
冶金
工程类
化学
色谱法
作者
Kohei Kozono,Takuji Hosoi,Yusuke Kagei,Takashi Kirino,Shujiro Mitani,Yoshiaki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe
出处
期刊:Materials Science Forum
日期:2010-04-01
卷期号:645-648: 821-824
被引量:9
标识
DOI:10.4028/www.scientific.net/msf.645-648.821
摘要
The dielectric breakdown mechanism in 4H-SiC metal-oxide-semiconductor (MOS) devices was studied using conductive atomic force microscopy (C-AFM). We performed time-dependent dielectric breakdown (TDDB) measurements using a line scan mode of C-AFM, which can characterize nanoscale degradation of dielectrics. It was found that the Weibull slope () of time-to-breakdown (tBD) statistics in 7-nm-thick thermal oxides on SiC substrates was much larger for the C-AFM line scan than for the common constant voltage stress TDDB tests on MOS capacitors, suggesting the presence of some weak spots in the oxides. Superposition of simultaneously obtained C-AFM topographic and current map images of SiO2/SiC structure clearly demonstrated that most of breakdown spots were located at step bunching. These results indicate that preferential breakdown at step bunching due to local electric field concentration is the probable cause of poor gate oxide reliability of 4H-SiC MOS devices.
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