材料科学
凝聚态物理
压缩(物理)
单晶
物理
核磁共振
复合材料
作者
G. Ya. Khadzhaĭ,A. O. Komisarov,O. Yu. Vragov,V. O. Kovrygin,Р. В. Вовк
摘要
In the present work, the effect of all-round compression up to 10 kbar on the in-plane electrical resistivity of well-structured Y0.66Pr0.34Ba2Cu3O7–δ (δ < 0.15, Тс ≈ 51.8 K, ΔТс ≈ 2 K) single crystals has been investigated. In contrast to the samples with low praseodymium doping (x ≈ 0.05), the application of all-round compression to the samples with medium praseodymium doping (х ≈ 0.34) leads to an increase in the baric derivative dТс/dP by more than two times. It was found that, in contrast to polycrystalline samples, there was no change in the sign of the baric derivatives dТс/dP. The applicability of the well-known McMillan formula to explain the effect of all-round compression on Тс is discussed.
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