GaN based DC-DC converters for high energy physics applications

Abstract This paper introduces a prototype of a GaN-FET based 200 W DC-DC converter. Its design has been carried out to evaluate power density (or power dissipation and volume) and ensure minimal electromagnetic interference (EMI) issues that are commonly associated with the high switching frequency converters. To achieve this ANSYS HFSS-SiWave models have been developed to assess noise emissions based on the parasitic elements of PCB layout. Prototypes performance have been evaluated through extensive testing. This work offers insight into the potential of this technology in future physics detectors.