Improved Localized Laser Doping of Boron‐Doped Si Paste for High‐Efficiency Solar Cells

Laser doping (LD) of born‐doped Si paste (Si paste) is a potential boron‐doping approach for advanced solar cells. It is aimed to develop a top‐hat LD instead of a Gaussian LD and a rear‐side polishing process to fabricate P ++ local contacts for improved passivated emitter and rear contact (i‐PERC) cells. With the help of vision alignment, LD is conducted on a dashed line pattern of printed Si paste, which decreases the consumption of paste. The variations of boron content in Si paste and the laser pulse energy density can help customize the doping profile. The predicted result of the boron LD profile is a peak dopant density of 2 × 10 19 atoms cm −3 and a dopant depth of over 4.0 μm. When higher firing temperature, it can obtain thicker localized back surface field of over 7 μm, since the gradient of the residual Si concentration at the Al/Si interface can suppress the formation of voids. The overall increment in fill factor, short‐circuit current, and open‐circuit voltage enhances the average efficiency by 0.11% for i‐PERC cells and 0.09% for i‐bifacial PERC cells, respectively, due to the improved local contacts.