拓扑绝缘体
反铁磁性
材料科学
凝聚态物理
拓扑序
拓扑(电路)
带隙
拉伸应变
绝缘体(电)
联轴节(管道)
量子
极限抗拉强度
物理
光电子学
量子力学
数学
组合数学
冶金
作者
Lu Huang,Wen-Ti Guo,Jiefeng Ye,Ruiqi Liu,Jian‐Min Zhang
出处
期刊:Physica Scripta
[IOP Publishing]
日期:2023-07-05
卷期号:98 (8): 085944-085944
被引量:1
标识
DOI:10.1088/1402-4896/ace487
摘要
Abstract Magnetic topological insulators (MTIs) of the MnBi 2x Te 3 x +1 family, discovered in recent years, have been successfully used to explore various emerging physical phenomena. In this work, the electronic structure and topological properties of the bulk structured antiferromagnetic (AFM) topological insulator (TI) MnSb 4 Se 7 under spin–orbit coupling (SOC) are investigated based on the first-principle calculations. Our results show that the AFM MnSb 4 Se 7 is a non-trivial TI. And applying strain to the AFM MnSb 4 Se 7 can close the band gap. Furthermore, with increasing tensile and compressive strains, AFM MnSb 4 Se 7 undergoes a topological phase transition from a non-trivial TI to a trivial insulator. With increasing strain further, the system undergoes an insulator-metal phase transition. These results suggest that the AFM MnSb 4 Se 7 material has tunable topological properties and is a candidate for exploring interesting topological quantum states and that our work also provides effective help for experimental modulation.
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