Efficient and Stable Gd3Ga5O12:Cr3+ Phosphors for High‐Performance NIR LEDs

Abstract Cr 3+ ‐activated Gd 3 Ga 5 O 12 garnet (GGG:Cr 3+ ) near‐infrared (NIR) phosphors have shown promising applications in regulating plant growth. However, the low external quantum efficiency (EQE) results in a wall‐plug efficiency (WPE) of phosphor‐converted light‐emitting diodes (pc)‐LEDs of only ≈15%. Herein, an easy strategy to improve the luminescent properties of the GGG:Cr 3+ phosphor is reported. Through optimization of the synthesized technology, the EQE is enhanced to 43.6%. Remarkably, the fabricated pc‐LEDs achieve a WPE as high as 34.3%. These results demonstrate a significant advancement in the development and applications of NIR phosphor materials and NIR pc‐LED devices.