硼嗪
材料科学
氮化硼
成核
基质(水族馆)
分子束外延
微晶
三甲基镓
硼
氮气
单晶硅
氮化物
等离子体
外延
分析化学(期刊)
化学工程
纳米技术
光电子学
硅
图层(电子)
冶金
金属有机气相外延
有机化学
化学
海洋学
物理
工程类
量子力学
地质学
作者
Jawad Hadid,Ivy Colambo,J. Ávila,Alexandre Plaud,Christophe Boyaval,Dominique Deresmes,Nicolas Nuns,Pavel Dudin,Annick Loiseau,Julien Barjon,X. Wallart,D. Vignaud
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2022-10-13
卷期号:34 (3): 035601-035601
被引量:5
标识
DOI:10.1088/1361-6528/ac99e5
摘要
Abstract 2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. The excess of nitrogen atoms allows to overcome the thickness self-limitation active on Ni when using borazine alone. The nucleation density and the shape of the 2D-BN domains are clearly related to the Ni substrate preparation and to the growth parameters. Based on spatially-resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of the N1s and B1s components and their relationship with an electronic coupling at the interface. After optimization of the growth parameters, a full 2D-BN coverage is obtained, although the material thickness is not evenly distributed. The 2D-BN presents a granular structure on (111) oriented Ni grains, showing a rather poor cristallographic quality. On the contrary, high quality 2D-BN is found on (101) and (001) Ni grains, where triangular islands are observed whose lateral size is limited to ∼20 μ m.
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