钝化
串联
非阻塞I/O
钙钛矿(结构)
材料科学
GSM演进的增强数据速率
硅
能量转换效率
光电子学
氧化镍
太阳能电池
载流子寿命
氧化物
晶体硅
钙钛矿太阳能电池
化学工程
图层(电子)
作者
Xinru Wang,Mengqi Li,Lulu Yu,Bingbing Chen,Mengnan Cui,Haishun Gao,Xueliang Yang,Xuning Zhang,Jianhui Chen
出处
期刊:eScience
[Elsevier]
日期:2025-09-11
卷期号:6 (2): 100471-100471
被引量:4
标识
DOI:10.1016/j.esci.2025.100471
摘要
Wide-band gap perovskites combined with silicon (Si) in tandem solar cells offer a cost-effective path to industrialization. However, surface recombination at the buried interface of perovskite solar cells (PSCs) and the edge surface of Si solar cells affects their efficiency and stability. Herein, we design a multi-site passivation agent to simultaneously suppress defect recombination in hole transfer layer (HTL) surface, perovskite buried interface, and Si edge for efficient tandem solar cells. The increased ratio of Ni 3+ /Ni 2+ reduces the nickel oxide (NiO x )/perovskite interface reaction and improves the conductivity of the NiO x HTL. The reconstructed underlayer is more propitious to the perovskite deposition, which releases the residual strain, resulting in the enhancement of the efficiency and stability of PSCs. Moreover, the multi-site passivation agent presents a distinctive passivation effect for edge surface of Si solar cells. Power conversion efficiencies (PCEs) of 21.95% and 20.01% are obtained at opaque and semitransparent PSCs, respectively. Additionally, a four-terminal tandem solar cell exhibits a PCE of 31.02% with +1.19%abs PCE increase for bottom cell by edge surface passivation. Overall, this work provides a simple and multi-site surface defect passivation strategy for obtaining high-efficiency and stable perovskite and perovskite tandem solar cells. • A multi-site passivation agent is introduced to simultaneously suppress defect recombination at the hole transport layer (HTL) surface, the buried perovskite interface, and the silicon edge, enabling more efficient perovskite/silicon tandem solar cells. • This strategy mitigates interfacial reaction between nickel oxide (NiO x ) and the perovskite layer while enhancing the conductivity of NiO x , thereby boosting both the efficiency and stability of the perovskite top cell. • Additionally, the multi-site passivation agent relieves residual strain in the perovskite films, further enhancing the operational stability of the devices.
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