纳米技术
材料科学
碳化硅
量子点
电致发光
光电子学
荧光
光致发光
物理
光学
冶金
图层(电子)
作者
Mahdi Hasanzadeh Azar,Jahanbakhsh Jahanzamin,Zimo Ji,Adrian Kitai,Dávid Beke,Ádám Gali
出处
期刊:Small science
[Wiley]
日期:2025-06-28
卷期号:5 (8): 2500013-2500013
被引量:2
标识
DOI:10.1002/smsc.202500013
摘要
Earth‐abundant, fluorescent silicon carbide (SiC) quantum dots (QDs) have recently attracted remarkable attention on account of their long‐term chemical and optical stability and impressive biocompatibility. However, there has been a long‐standing debate among researchers concerning whether radiative recombination in SiC QDs is governed by quantum confinement effects or by surface‐related states. Herein, the underlying mechanism responsible for the photoluminescence observed in SiC QDs is elucidated. Significant progress made through the development of advanced strategies for synthesizing ultrasmall SiC QDs and modifying their surfaces with functional groups, conjugated molecules, and protective shells is discussed. Subsequently, the potential for engineered SiC QDs to be applied to a range of sectors, including energy (photocatalytic‐based CO 2 reduction systems), electronics/optoelectronics (electroluminescent white light‐emitting diodes, nonlinear optics, and quantum sensing), and biomedicine (cell imaging and biosensors), is reviewed. Finally, this review is summarized with some forward‐looking challenges and prospects.
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