记忆电阻器
计算机科学
稳健性(进化)
横杆开关
记忆晶体管
非线性系统
电压
电阻随机存取存储器
梯度下降
人工智能
电子工程
人工神经网络
电气工程
工程类
物理
电信
基因
量子力学
生物化学
化学
作者
Renhai Feng,Jiahang Li,Sheng Xie,Xurui Mao
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2023-02-02
卷期号:70 (7): 2410-2414
被引量:11
标识
DOI:10.1109/tcsii.2023.3241663
摘要
In this brief, an efficient training method for memristor-based array (crossbar) with one transistor and one memristor (1T1M) synapse is proposed, which enables parallel update of memristor-based arrays trained by stochastic gradient descent within two steps. Voltage ThrEshold Adaptive Memristor (VTEAM) model is utilized to describe memristor characteristics for simulations. On this basis, circuit parameters optimization method compensating the asymmetric and nonlinear weight update is provided for better training results. The effectiveness of proposed training method is evaluated on OR, AND functions and digit recognition task. Simulation results demonstrate the robustness of proposed training method to electrical noise and imperfections of memristors.
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