Uniformity, Linearity, and Symmetry Enhancement in TiOx/MoS2–xOx Based Analog RRAM via S-Vacancy Confined Nanofilament

Due to the stochastic formation of conductive filaments (CFs), analog resistive random-access memory (RRAM) struggles to simultaneously achieve low variability, high linearity, and symmetry in conductance tuning, thus complicating on-chip training and limiting versatility of RRAM based computing-in-memory (CIM) chips. In this study, we present a simple and effective approach using monolayer (ML) MoS