33‐3: High Responsivity and Low Dark Current Phototransistor Based on Perovskite/InZnO Heterostructure

Amorphous metal oxide semiconductors (AOS), especially indium‐gallium‐zinc oxide (IGZO), have been studied and applied in sensing, display and other industrial fields, including phototransistors, because of their outstanding electronic properties. [1] [2] However, due to its much low visible light response and limited mobility, IGZO could not match the rapidly developing application needs of phototransistor. [3] The construction of photo‐TFT (thin film transistor) with better electronical performance and stronger light response has become a key issue. [4] Therefore, indium‐zinc oxide (IZO) with relative high mobility (15~20 cm 2 /V.s) and perovskite with high photosensitivity come into view. [5] In this study, we report a Ruddlesden‐Popper (RP) quasi‐two‐dimensional (quasi‐2D) perovskite‐IZO phototransistor with heterostructure. A quasi‐2D perovskite layer is spin‐coated on the high‐mobility IZO channel TFT, which enables ultralow off‐state dark current of 10 ‐12 A, high responsivity and detectivity under visible light, especially high responsivity and detectivity of 1480 A/W and 2.21×10 14 Jones under 525 nm green light illumination.