Scalable Fabrication of Intrinsically Stretchable Organic Electrochemical Transistors with Neuromorphic Functions

Organic electrochemical transistors (OECTs) have recently emerged as promising platforms for wearable sensors and computing devices. However, the scalable manufacturing of stretchable OECT remains a significant challenge, limiting their advancement in multicomponent sensing and massive data processing. Here, we present a photo-cross-linking strategy for the scalable fabrication of the intrinsically stretchable organic electrochemical transistors (IS-OECTs). This innovative approach allows for precise patterning of the organic semiconductor, specifically p(g2T-T). Notably, the photo-cross-linked p(g2T-T) maintains its integrity without cracking even under a 200% strain, ensuring consistent device performance under extreme strain conditions. By harnessing the nonlinear response and fading memory effect of the p(g2T-T)-based IS-OECT array, we developed a stretchable reservoir computing system that achieved impressive image recognition accuracies of 90.81% and 90.65% at 0% and 100% strains, respectively.