Doping-less MultiGate Inverted-T shape FET device with Schottky source/drain contacts

A dopingless multi-gate inverted-T Shape device has been proposed with Schottky source/drain contacts. Gate oxide engineering is performed on the proposed device, and its two configurations namely Hetero-Dielectric (HD) and Gate-Stack (GS) are implemented. The proposed HD configuration of dopingless inverted-T shape FET has asymmetric oxide; where oxide (HfxTi1-xO2) having high value of dielectric is placed on source side and SiO2 with lower dielectric value is placed on drain side. The designed device showcase a leakage current of approximately 10−16 A in contrast to the traditional junctionless FET which has leakage of 10−10 A. Also, comparative analysis of the GS and HD dopingless multi-gate inverted-T shape transistor is outlined at different parameters including channel length, fin width and Ultra-thin body thickness. AC analysis of the device has been done to evaluate cut-off frequency and gain bandwidth product. Additionally, p-channel configuration is formulated in conjunction with n-channel MOS configuration to investigate the device's suitability for applications employing CMOS technology.