CMOS芯片
互连
晶体管
电子工程
功率(物理)
电气工程
材料科学
计算机科学
工程类
物理
电信
电压
量子力学
作者
Sang Ho Lee,E.W. Greeneich
出处
期刊:Vlsi Design
日期:2002-01-01
卷期号:15 (3): 619-628
标识
DOI:10.1080/1065514021000012237
摘要
Efficient, generalized delay and power equations are proposed for large scale CMOS circuit analysis and optimization achieved by transistor and interconnect wire minimization. The proposed model equations are used to analyze the entire power‐delay trade‐off with less complexity and faster computation time. New equations can be adopted to perform the optimization of transistor and interconnect wire size concurrently. A single stage CMOS circuit and a clock generation block fabricated in 0.48 um CMOS process are given as experimental examples.
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