Characteristics of the {111} Surfaces of the III–V Intermetallic Compounds

Surface characteristics of the {111} crystallographic planes of the III–V intermetallic compounds (zinc‐blende structure), and in particular those of InSb , are discussed. The polarity of these compounds along the 〈111〉 directions leads to pronounced physical chemical differences between the {111} surfaces terminating with group III atoms and those terminating with group V atoms. Differences in etching, dislocation etch pit formation, and electrode potential are presented. Dislocation etch pits form on the group III surfaces and not on the group V surfaces of the six compounds investigated ( InSb , GaSb , AlSb , InAs , GaAs , and InP ). A proposed interpretation is based on the relative reactivity of the group III and group V atoms as affected by their bond configuration and the polarity of the zinc‐blende structure.