化学机械平面化
抛光
泥浆
材料科学
硅酸盐玻璃
硅酸盐
电介质
硼
复合材料
化学工程
矿物学
光电子学
化学
工程类
有机化学
作者
Robert Tolles,Hubert Bath,B. Doris,Rahul Jairath,R.D. Leggett,Siva Sivaram
摘要
Chemical Mechanical Polishing (CMP) is becoming a mainstream technology for the planarization of dielectrics at various process levels. Widely different types of glass films are now routinely processed using CMP techniques. In this work, the polish rates using an aqueous silica based slurry for thermally grown SiO2, plasma deposited SiO2, and boro-phospho-silicate glasses have been compared. A polishing mechanism based on the concentration of water in the glass is proposed. It is also shown that the presence of phosphorous changes the polishing mechanism compared to undoped glasses and the rate increase due to phosphorous is much greater than that due to boron.
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